External screening and lifetime of exciton population in single-layer ReSe probed by time- and angle-resolved photoemission spectroscopy
arXiv:2301.03916 · doi:10.1103/PhysRevMaterials.7.L041001
Abstract
The semiconductor ReSe is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe grown on a bilayer graphene substrate and monitor the temporal evolution of the excited state signal using time- and angle-resolved photoemission spectroscopy. We measure an optical gap of eV, consistent with resonant excitation of the lowest exciton state. The exciton distribution is tunable via the linear polarization of the pump pulse and exhibits a biexponential decay with time constants given by fs and fs, facilitated by recombination via an in-gap state that is pinned at the Fermi level. By extracting the momentum-resolved exciton distribution we estimate its real-space radial extent to be greater than 17.1 Å, implying significant exciton delocalization due to screening from the bilayer graphene substrate.
6 pages, 4 figures
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