External screening and lifetime of exciton population in single-layer ReSe probed by time- and angle-resolved photoemission spectroscopy
arXiv:2301.03916 · doi:10.1103/PhysRevMaterials.7.L041001
Abstract
The semiconductor ReSe is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe grown on a bilayer graphene substrate and monitor the temporal evolution of the excited state signal using time- and angle-resolved photoemission spectroscopy. We measure an optical gap of eV, consistent with resonant excitation of the lowest exciton state. The exciton distribution is tunable via the linear polarization of the pump pulse and exhibits a biexponential decay with time constants given by fs and fs, facilitated by recombination via an in-gap state that is pinned at the Fermi level. By extracting the momentum-resolved exciton distribution we estimate its real-space radial extent to be greater than 17.1 Å, implying significant exciton delocalization due to screening from the bilayer graphene substrate.
arXiv comment6 pages, 4 figures
References in corpus (17)
- Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
- Picosecond photoresponse in van der Waals heterostructures
- Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
- Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
- Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of Monolayer Distorted 1-T Diamond-chain Structures
- Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene
- Ultrafast Band Structure Control of a Two-Dimensional Heterostructure
- Direct measurement of key exciton properties: energy, dynamics and spatial distribution of the wave function
- Fast Exciton Annihilation by Capture of Electrons or Holes by Defects via Auger Scattering in Monolayer Metal Dichalcogenides
- Photoemission signature of excitons
- Theory of exciton dynamics in time-resolved ARPES: intra- and intervalley scattering in two-dimensional semiconductors
- Interlayer coupling and ultrafast hot electron transfer dynamics in metallic VSe2/graphene van der Waals heterostructures
- Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe
- The optical signature of few-layer ReSe
- Coherent Excitonic Quantum Beats in Time-Resolved Photoemission Measurements
- Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
- Ultrafast photocurrent and absorption microscopy of few-layer TMD devices isolate rate-limiting dynamics driving fast and efficient photoresponse