Ultrafast Band Structure Control of a Two-Dimensional Heterostructure
arXiv:1606.03555 · doi:10.1021/acsnano.6b02622
Abstract
The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-layer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS layer. Following optical excitation, the band gap is reduced by up to 400 meV on femtosecond timescales due to a persistence of strong electronic interactions despite the environmental screening by the -doped graphene. This points to a large degree of tuneability of both the electronic structure and electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.
arXiv comment22 pages, 5 figures, Published in ACS Nano 2016
References in corpus (17)
- Atomically thin MoS2: A new direct-gap semiconductor
- Van der Waals heterostructures
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Optical Spectrum of MoS: Many-body Effects and Diversity of Exciton States
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
- Snapshots of non-equilibrium Dirac carrier distributions in graphene
- Direct view on the ultrafast carrier dynamics in graphene
- Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2
- How dielectric screening in two-dimensional crystals affects the convergence of excited-state calculations: Monolayer MoS
- Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS
- Single-layer MoS on Au(111): band gap renormalization and substrate interaction
- Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene
- Tunable Carrier Multiplication and Cooling in Graphene
- Anisotropy of excitation and relaxation of photogenerated Dirac electrons in graphene
- Electron propagation from a photo-excited surface: implications for time-resolved photoemission
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