Quasiparticle gap renormalization driven by internal and external screening in a WS device
arXiv:2503.16234 · doi:10.1103/yllv-5zx7
Abstract
The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused angle resolved photoemission spectroscopy to separate band gap renormalization effects stemming from environmental screening and electron-doping during \textit{in situ} gating of a single-layer WS device. The WS is supported on hBN and contains a section that is exposed to vacuum and another section that is encapsulated by a graphene contact. We directly observe the doping-induced semiconductor-metal transition and band gap renormalization in the two sections of WS. Surprisingly, a larger band gap renormalization is observed in the vacuum-exposed section than in the graphene-encapsulated - and thus ostensibly better screened - section of the WS. Using calculations, we determine that intrinsic screening due to stronger doping in vacuum exposed WS exceeds the external environmental screening in graphene-encapsulated WS.
31 pages, 12 figures (4 figures in main text and 8 figures in supporting information)
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