Interplay of screening and superconductivity in low-dimensional materials

Abstract

A quantitative description of Coulomb interactions is developed for two-dimensional superconducting materials, enabling us to compare intrinsic with external screening effects, such as those due to substrates. Using the example of a doped monolayer of MoS2 embedded in a tunable dielectric environment, we demonstrate that the influence of external screening is limited to a length scale, bounded from below by the effective thickness of the quasi-two-dimensional material and from above by its intrinsic screening length. As a consequence, it is found that unconventional Coulomb-driven superconductivity cannot be induced in MoS2 by tuning the substrate properties alone. Our calculations of the retarded Morel-Anderson Coulomb potential {μ*} reveal that the Coulomb interactions, renormalized by the reduced layer thickness and the substrate properties, can shift the onset of the electron-phonon driven superconducting phase in monolayer MoS2 but do not significantly affect the critical temperature at optimal doping.

arXiv comment8 pages, 5 figures

References in corpus (24)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• How does quantum confinement influence the electronic structure of transition metal sulfides TmS2
• High-temperature superconductivity in iron-based materials
• Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3
• Superconductivity in single-layer films of FeSe with a transition temperature above 100 K
• Two Dimensional Ising Superconductivity in Gated MoS${}_2$
• Strongly enhanced charge-density-wave order in monolayer NbSe${}_2$
• Gate-tunable Phase Transitions in 1T-TaS${}_2$
• Superconductivity protected by spin-valley locking in ion-gated MoS2
• Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Effect of magnetic frustration on nematicity and superconductivity in Fe chalcogenides
• The dielectric genome of van der Waals heterostructures
• Efficient implementation of the GW approximation within the all-electron FLAPW method
• Possible Topological Superconducting Phases of MoS${}_2$
• Electrostatically Induced Superconductivity at the Surface of WS${}_2$
• Interactions and superconductivity in heavily doped MoS2
• Large electron-phonon interactions from FeSe phonons in a monolayer
• Interface enhanced electron-phonon coupling and high temperature superconductivity in potassium-coated ultra-thin FeSe films on SrTiO3
• Wannier Function Approach to Realistic Coulomb Interactions in Layered Materials and Heterostructures
• Phase Diagram of Electron Doped Dichalcogenides
• Superconducting dome in MoS2 and TiSe2 generated by quasiparticle-phonon coupling
• Valley Plasmonics in the Dichalcogenides
• Triplet pairing driven by Hund's coupling in doped monolayer MoS${}_2$

Cited by in corpus (13)

• Internal screening and dielectric engineering in magic-angle twisted bilayer graphene
• Competing Coulomb and electron-phonon interactions in NbS${}_2$
• Excitation-induced transition to indirect band gaps in atomically thin transition metal dichalcogenide semiconductors
• Coulomb-Engineered Heterojunctions and Dynamical Screening in Transition Metal Dichalcogenide Monolayers
• Exciton-exciton interactions in van der Waals heterobilayers
• Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping
• Non-invasive control of excitons in two-dimensional materials
• Coulomb Engineering of two-dimensional Mott materials
• Screening Induced Crossover between Phonon- and Plasmon-Mediated Pairing in Layered Superconductors
• Doping fingerprints of spin and lattice fluctuations in moiré superlattice systems
• Competition between phonon mediated superconductivity and carriers localization in field-effect doped molybdenum dichalcogenides
• Quasiparticle gap renormalization driven by internal and external screening in a WS${}_2$ device
• Microscopic Theory of Exciton-Exciton Annihilation in Two-Dimensional Semiconductors