activity
20242026
most citedRevealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES

10 citations · 15 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2026★ 1 cited

Electric Field-Induced Hole- and Electron-Type Flat Bands in Twisted Double Bilayer Graphene

Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones +11

Application of a finite electric field and small twist angle between two graphene bilayers leads to widely tunable electronic structures that support emergent phenomena. Here, we m…

cond-mat.str-el2026

Direct view of exciton and carrier dynamics in twisted bilayer graphene

Gianmarco Gatti, Anders S. Mortensen, Zhihao Jiang +12

Twisted bilayer graphene (tBLG) on H-intercalated SiC (twist angle of ) is studied by position\mbox{-}, time\mbox{-}, and angle-resolved photoemission spectroscopy…

cond-mat.mes-hall2026

Observation of dodecagonal replica bands in 30-twisted bilayer WSe

Christian Valentiner-Branth Fokdal, Chakradhar Sahoo, Thomas S. Nielsen +6

Twisted bilayers of two-dimensional (2D) transition metal dichalcogenides are promising systems for achieving tunable quasicrystalline orders with emergent properties. The underpin…

physics.optics2026

Micro- and nanoscale focusing across the XUV range of the ASTRID2 light source with a capillary optic

Alfred J. H. Jones, Zhihao Jiang, Asger Petersen +5

Focusing of synchrotron light across extreme ultraviolet (XUV) and soft X-ray regimes is increasingly desired for photoemission-based techniques where reduced beam width gives acce…

cond-mat.mes-hall2026

Band offsets and stability of WSe/RuCl van der Waals charge-transfer contacts

Thomas S. Nielsen, Edvard Solbrekken, Christian Overby +7

The layered Mott insulator -RuCl induces degenerate hole-doping in two-dimensional semiconductors due to its large electron affinity, making it a promising charge-transfer m…

cond-mat.mes-hall2025★ 4 cited

Quasiparticle gap renormalization driven by internal and external screening in a WS device

Chakradhar Sahoo, Yann in 't Veld, Alfred J. H. Jones +11

The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and t…

cond-mat.mes-hall2024

Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle

Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones +12

Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena a…

cond-mat.mes-hall2024★ 10 cited

Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES

Zhihao Jiang, Kimberly Hsieh, Alfred J. H. Jones +7

Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic doping is an effective means to induce emergent phenomena.…