694 citations · 831 across the 41 of their papers we have counts for
43 papers
Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield
Gayatri, Mehdi Arfaoui, Debashish Das +14
Strain engineering is a powerful route for controlling the exciton dynamics in van der Waals (vdW) heterostructures (HSs). The interlayer energy transfer (ET) process is another ke…
Super-resolution Control of Individual Two-dimensional Quantum Emitters
Bosai Lyu, Valeria Vento, Ludivine Fausten +8
Localized interlayer excitons in semiconducting transition-metal dichalcogenide heterobilayers are quantum emitters with a static electric dipole moment, making them excellent nano…
Observation of dodecagonal replica bands in 30-twisted bilayer WSe
Christian Valentiner-Branth Fokdal, Chakradhar Sahoo, Thomas S. Nielsen +6
Twisted bilayers of two-dimensional (2D) transition metal dichalcogenides are promising systems for achieving tunable quasicrystalline orders with emergent properties. The underpin…
Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2
Tianhui Zhu, Carlos A. Gonzalez, Shihao Tu +11
Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engi…
Beam Routing through Excitons in Transition Metal Dichalcogenide Monolayers
Yonas Lebsir, Jacob Terndrup Heiden, Jorge Barcia Rodríguez +6
Routing light at the nanoscale typically relies on nanostructured surfaces to imprint directionality on the emission. Using low-temperature, angle-resolved cathodoluminescence spec…
Alloy engineering of excitonic properties in TMD monolayers
Eirini Katsipoulaki, Adlen Smiri, Panagiotis Spiliotakis +12
We investigate monolayer MoSSe alloys across the full composition range using optical spectroscopy. We demonstrate continuous tuning of the optical gap over $\sim…
Band offsets and stability of WSe/RuCl van der Waals charge-transfer contacts
Thomas S. Nielsen, Edvard Solbrekken, Christian Overby +7
The layered Mott insulator -RuCl induces degenerate hole-doping in two-dimensional semiconductors due to its large electron affinity, making it a promising charge-transfer m…
Time-resolved Charge Detection in Transition Metal Dichalcogenide Quantum Dots
Markus Niese, Michele Masseroni, Clara Scherm +10
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS using an integrated charge detector. We observe a crossover from two weakly co…
High luminescence efficiency of multi-valley excitonic complexes in heavily doped WSe2 monolayer
Sébastien Roux, Tilly Guyot, Abraao Cefas Torres-Dias +9
Monolayers of group-VI transition-metal dichalcogenides (TMDs) are two-dimensional semiconductors that exhibit exceptionally strong light-matter coupling yet typically suffer from…
Monolayers Grown by Molecular Beam Epitaxy on hBN
Julia Kucharek, Mateusz Raczyński, Rafał Bożek +9
A three-step process was developed for growing high-quality, optically uniform WSe2 monolayers by molecular beam epitaxy (MBE) with advantage of using hexagonal boron nitride (hBN)…
Tunability of Robust Exciton-Trion Polaritons in Atomically Thin WS2 Monolayers
Xuguang Cao, Debao Zhang, Ji Zhou +6
Herein, we present an experimental demonstration of the robust exciton-trion polaritons (ETPs) by measuring and simulating the resonance reflectance spectra of various configuratio…
Polarized electroluminescence with magnetic spectral tuning in van der Waals magnet CrSBr
Yilei Wang, Shiqi Yang, Leyan Huang +7
Polarized wavelength-tunable electroluminescence (EL) represents a critical on-demand functionality for next-generation optoelectronics. While conventional van der Waals (vdW) EL d…
Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS2 through Coulomb Engineering
Jing Liang, Yuan Xie, Dongyang Yang +6
High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite signi…
Layered semiconductors integrated with polyimide thin films for high-quality valleytronic and quantum-photonic systems
Jithin T Surendran, Indrajeet D Prasad, Kenji Watanabe +2
Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron ni…
Gate-tunable hot electron extraction in a two-dimensional semiconductor heterojunction
Chenran Xu, Chen Xu, Jichen Zhou +9
Hot carrier solar cells (HCSCs), harvesting excess energy of the hot carriers generated by above-band-gap photoexcitation, is crucial for pushing the solar cell efficiency beyond t…
Fast Interlayer Energy Transfer from the Lower Bandgap MoS2 to the Higher Bandgap WS2
Gayatri, Mehdi Arfaoui, Debashish Das +9
Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However…
Gate-tunable band-edge in few-layer MoS
Michele Masseroni, Isaac Soltero, James G. Hugh +9
Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-l…
Quasiparticle gap renormalization driven by internal and external screening in a WS device
Chakradhar Sahoo, Yann in 't Veld, Alfred J. H. Jones +11
The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and t…
Quantifying hydrogen bonding using electrically tunable nanoconfined water
Ziwei Wang, Anupam Bhattacharya, Mehmet Yagmurcukardes +11
Hydrogen bonding plays a crucial role in biology and technology, yet it remains poorly understood and quantified despite its fundamental importance. Traditional models, which descr…
Photoluminescence efficiency of MBE-grown MoSe monolayers featuring sharp excitonic lines and diverse grain structures
Mateusz Raczyński, Julia Kucharek, Kacper Oreszczuk +7
Recent studies have demonstrated that using h-BN as a substrate for the growth of transition metal dichalcogenides can significantly reduce excitonic linewidths. However, many othe…
Measurements of absolute bandgap deformation-potentials of optically-bright bilayer WSe
Indrajeet Dhananjay Prasad, Sumitra Shit, Yunus Waheed +4
Bilayers of transition-metal dichalcogenides show many exciting features, including long-lived interlayer excitons and wide bandgap tunability using strain. Not many investigations…
Hybrid Frenkel-Wannier excitons facilitate ultrafast energy transfer at a 2D-organic interface
Wiebke Bennecke, Ignacio Gonzalez Oliva, Jan Philipp Bange +13
Two-dimensional transition metal dichalcogenides (TMDs) and organic semiconductors (OSCs) have emerged as promising material platforms for next-generation optoelectronic devices. T…
Optical memory in a MoSe/Clinochlore device
Alessandra Ames, Frederico B. Sousa, Gabriel A. D. Souza +10
Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers,…
Gating monolayer and bilayer graphene with a two-dimensional semiconductor
Randy Sterbentz, Bogyeom Kim, Anayeli Flores-Garibay +5
Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconductin…