The dielectric impact of layer distances on exciton and trion binding energies in van der Waals heterostructures
arXiv:1712.05607 · doi:10.1021/acs.nanolett.8b00840
Abstract
The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric hetero-multi-layered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances.
References in corpus (9)
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
- Excitons versus electron-hole plasma in monolayer transition metal dichalcogenide semiconductors
- Observation of exciton redshift-blueshift crossover in monolayer WS2
- Three-particle Complexes in Two-Dimensional Semiconductors
- Engineering of Neutral Excitons and Exciton Complexes in Transition Metal Dichalcogenide Monolayers through External Dielectric Screening
- Observing imperfection in atomic interfaces for van der Waals heterostructures
- Excitons and trions in monolayer transition metal dichalcogenides: A comparative study between the multiband model and the quadratic single-band model
- Influence of the effective layer thickness on the groundstate and excitonic properties of transition-metal dichalcogenide systems
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