Combined tensor network/cluster expansion method using logic gates: Illustrated for (bi-)excitons by a single layer MoS model system
arXiv:1807.09036 · doi:10.1103/PhysRevB.99.241301
Abstract
Carriers such as electrons and holes inside the Brillouin zone of complex semiconducting materials can form bound states (excitons, biexcitons etc.). For obtaining the corresponding eigenstates (e.g. through Wannier or Bethe Salpeter equation) and dynamics (e.g. cluster expansion) the number of involved electrons and holes as well as the accuracy is limited by the appearing high dimensional tensors (i.e. wavefunctions or correlations). These tensors can be efficiently represented and manipulated via tensor network methods. We show how tensor networks formulated via classic logic gates can be used to treat electron-hole complexes inside the Brillouin zone. The method is illustrated for the exciton and biexciton states of a single layer transition metal dichalcogenide MoS like model system.
6 pages, 3 figures
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- Band nesting and exciton spectrum in monolayer MoS
- Excited-State Trions in Two Dimensional Materials
- Excitonic theory of doping-dependent optical response in atomically thin semiconductors
- Theory of the Coherent Response of Magneto-Excitons and Magneto-Biexcitons in Monolayer Transition Metal Dichalcogenides
- Tensor network strategies for calculating biexcitons and trions in monolayer 2D materials beyond the ground state
- Continuous and time-discrete non-Markovian system-reservoir interactions: Dissipative coherent quantum feedback in Liouville space
- Theory of interlayer exciton dynamics in 2D TMDCs Heterolayers under the influence of strain reconstruction and disorder
- Tensor Network for Supervised Learning at Finite Temperature
- Efficient bit encoding of neural networks for Fock states