Excitonic theory of doping-dependent optical response in atomically thin semiconductors
arXiv:2201.02164 · doi:10.1103/PhysRevB.105.045301
Abstract
The interaction of optically excited excitons in atomically thin semiconductors with residual doping densities leads to many-body effects which are continuously tunable by external gate voltages. Here, we develop a fully microscopic theory to describe the doping-dependent manipulation of the excitonic properties in atomically thin transition metal dichalcogenides. In particular, we establish a diagonalization approach for the Schrödinger equation which characterizes the interaction of a virtual exciton with the Fermi sea of dopants. Solving this many-body Schrödinger equation provides access to trions as well as a continuum of scattering states. The dynamics of coupled excitons, trions, and scattering continua is subsequently described by Heisenberg equations of motion including mean-field contributions and correlation effects due to the interaction of excitons with trions and scattering continuum states. Our calculations for optical excitation close to the band edge reveal the influence of doping on the exciton resonances in combination with the simultaneous identification of not only ground-, but also excited-, state trion resonances.
References in corpus (25)
- Valley polarization in MoS2 monolayers by optical pumping
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- Many-Body Theory of Trion Absorption Features in Two-Dimensional Semiconductors
- Excitons versus electron-hole plasma in monolayer transition metal dichalcogenide semiconductors
- Phonon Sidebands in Transition Metal Dichalcogenides
- Polarization and time-resolved photoluminescence spectroscopy of excitons in MoSe2 monolayers
- Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization
- Diffusion quantum Monte Carlo study of excitonic complexes in two-dimensional transition-metal dichalcogenides
- Observing imperfection in atomic interfaces for van der Waals heterostructures
- Exciton-Scattering-Induced Dephasing in Two-Dimensional Semiconductors
- Hybridized intervalley moiré excitons and flat bands in twisted WSe bilayers
- Electron-exciton interactions in the exciton-polaron problem
- Intrinsic Lifetime of Higher Excitonic States in Tungsten Diselenide Monolayers
- Excitons and trions in monolayer transition metal dichalcogenides: A comparative study between the multiband model and the quadratic single-band model
- Ground and Excited Exciton Polarons in Monolayer MoSe2
- A Many-Body Theory of the Optical Conductivity of Excitons and Trions in Two-Dimensional Materials
- Trion and Biexciton in Monolayer Transition Metal Dichalcogenides
- Many-body theory of optical absorption in doped two-dimensional semiconductors
- Dynamical screening effects of substrate phonons on two-dimensional excitons
- Theory of the Coherent Response of Magneto-Excitons and Magneto-Biexcitons in Monolayer Transition Metal Dichalcogenides
- Doping-induced non-Markovian interference causes excitonic linewidth broadening in monolayer WSe