Excitonic theory of doping-dependent optical response in atomically thin semiconductors
arXiv:2201.02164 · doi:10.1103/PhysRevB.105.045301
Abstract
The interaction of optically excited excitons in atomically thin semiconductors with residual doping densities leads to many-body effects which are continuously tunable by external gate voltages. Here, we develop a fully microscopic theory to describe the doping-dependent manipulation of the excitonic properties in atomically thin transition metal dichalcogenides. In particular, we establish a diagonalization approach for the Schrödinger equation which characterizes the interaction of a virtual exciton with the Fermi sea of dopants. Solving this many-body Schrödinger equation provides access to trions as well as a continuum of scattering states. The dynamics of coupled excitons, trions, and scattering continua is subsequently described by Heisenberg equations of motion including mean-field contributions and correlation effects due to the interaction of excitons with trions and scattering continuum states. Our calculations for optical excitation close to the band edge reveal the influence of doping on the exciton resonances in combination with the simultaneous identification of not only ground-, but also excited-, state trion resonances.
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