Dynamical screening effects of substrate phonons on two-dimensional excitons

Abstract

Atomically thin materials are exceedingly susceptible to their dielectric environment. For transition metal dichalcogenides, sample placement on a substrate or encapsulation in hexagonal boron nitride (hBN) are frequently used. In this paper we show that the dielectric response due to optical phonons of adjacent materials influences excitons in 2d crystals. We provide an analytic model for the coupling of 2d charge carriers to optical substrate phonons, which causes polaron effects similar to that of intrinsic 2d phonons. We apply the model to hBN-encapsulated WSe2, finding a significant reduction of the exciton binding energies due to dynamical screening effects.

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Cited by in corpus (9)

• Theory of exciton-electron scattering in atomically thin semiconductors
• Exciton-Scattering-Induced Dephasing in Two-Dimensional Semiconductors
• Quenching of Intervalley Exchange Coupling in the Presence of Momentum-Dark States in TMDCs
• Coulomb-Engineered Heterojunctions and Dynamical Screening in Transition Metal Dichalcogenide Monolayers
• Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors
• Excitonic theory of doping-dependent optical response in atomically thin semiconductors
• Effects of dynamical dielectric screening on the excitonic spectrum of monolayer semiconductors
• Bichromatic four-wave mixing and quadrature-squeezing from biexcitons in atomically thin semiconductor microcavities
• Efficient quadrature-squeezing from biexcitonic parametric gain in atomically thin semiconductors