Dynamical screening effects of substrate phonons on two-dimensional excitons
arXiv:1911.03218 · doi:10.1103/PhysRevB.101.045411
Abstract
Atomically thin materials are exceedingly susceptible to their dielectric environment. For transition metal dichalcogenides, sample placement on a substrate or encapsulation in hexagonal boron nitride (hBN) are frequently used. In this paper we show that the dielectric response due to optical phonons of adjacent materials influences excitons in 2d crystals. We provide an analytic model for the coupling of 2d charge carriers to optical substrate phonons, which causes polaron effects similar to that of intrinsic 2d phonons. We apply the model to hBN-encapsulated WSe2, finding a significant reduction of the exciton binding energies due to dynamical screening effects.
References in corpus (7)
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Ultrafast transition between exciton phases in van der Waals heterostructures
- Excitons versus electron-hole plasma in monolayer transition metal dichalcogenide semiconductors
- Plasmon-phonon coupling in graphene
- Ab initio calculations of ultra-short carrier dynamics in 2D materials: valley depolarization in single-layer WSe
- Observing imperfection in atomic interfaces for van der Waals heterostructures
- Influence of the effective layer thickness on the groundstate and excitonic properties of transition-metal dichalcogenide systems