Unusual Exciton-Phonon Interactions at van der Waals Engineered Interfaces
arXiv:1701.03881 · doi:10.1021/acs.nanolett.6b04944
Abstract
Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons which are either traditionally inactive or weak. This Raman scattering can be amplified by nearly two orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly, or via an A'1 optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. This cross-platform electron-phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.
Nano Letters: http://dx.doi.org/10.1021/acs.nanolett.6b04944
References in corpus (11)
- The Raman Fingerprint of Graphene
- Boron nitride substrates for high-quality graphene electronics
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
- Tightly bound excitons in monolayer WSe2
- Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO3
- Non-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers
- Intrinsic Exciton Linewidth in Monolayer Transition Metal Dichalcogenides
- Near-field spectroscopy of silicon dioxide thin films
- Double resonant Raman scattering and valley coherence generation in monolayer WSe2
- Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2
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- Excitons in atomically thin transition metal dichalcogenides
- Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
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- Magneto-Optics of Exciton Rydberg States in a Monolayer Semiconductor
- The dielectric impact of layer distances on exciton and trion binding energies in van der Waals heterostructures
- Emerging Photoluminescence from the Dark-Exciton Phonon Replica in Monolayer WSe2
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- Engineering of Neutral Excitons and Exciton Complexes in Transition Metal Dichalcogenide Monolayers through External Dielectric Screening
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- Spatial extent of the excited exciton states in WS monolayers from diamagnetic shifts
- Superior valley polarization and coherence of 2s excitons in monolayer WSe2
- Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure
- Anisotropic structural dynamics of monolayer crystals revealed by femtosecond surface x-ray scattering
- Macroscopic Single-Phase Monolayer Borophene on Arbitrary Substrates
- Ultrafast coherent interlayer phonon dynamics in atomically thin layers of MnBi2Te4
- Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS0.6Se1.4
- Probing Hyperbolic and Surface Phonon-Polaritons in 2D materials using Raman Spectroscopy
- New insights in the lattice dynamics of monolayers, bilayers, and trilayers of WSe2 and unambiguous determination of few-layer-flakes' thickness
- Dynamical screening effects of substrate phonons on two-dimensional excitons
- Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe and WSe Monolayers
- Spectrally tunable, large Raman enhancement from nonradiative energy transfer in van der Waals heterostructure
- Single-photon emitters in WSe: Critical role of phonons on excitation schemes and indistinguishability
- Monolayer Semiconductor Auger Detector
- Optical signatures of exciton-polarons from diagrammatic Monte Carlo
- Valley Phenomena in the Candidate Phase Change Material WSeTe
- Impact of optically pumped non-equilibrium steady states on luminescence emission of atomically-thin semiconductor excitons
- Insights into hyperbolic phonon polaritons in hBN using Raman scattering from encapsulated transition metal dichalcogenide layers
- Resonant Raman scattering of surface phonon polaritons mediated by excitons in WSe films
- Magneto-Optical Measurements of the Negatively Charged 2 Exciton in WSe
- Origin of interlayer exciton-phonon coupling in 2D heterostructures
- Moiré exciton dynamics and moiré exciton-phonon interaction in a WSe/MoSe heterobilayer