Origin of interlayer exciton-phonon coupling in 2D heterostructures
arXiv:2407.16111 · doi:10.1021/acs.nanolett.5c00355
Abstract
The coupling between excitons and phonons across adjacent layers has been experimentally observed in various heterostructures of layered materials. Yet the precise mechanism underlying this phenomenon remains elusive. Using the WSe@hBN heterostructure as an example, we study the origin of the interlayer exciton-phonon coupling and its signature in resonant Raman scattering through first-principles calculations. Our study emphasizes the central role of crystal symmetries in the interlayer exciton-phonon scattering processes, which are responsible for the anomalous resonant Raman intensities of the in-plane and the out-of-plane hBN phonon modes. We find that the deformation potential induced by the hBN phonon interacts with the hybridized hole density of WSe excitons near the hBN interface, leading to interlayer exciton-phonon coupling.
5 Pages, 3 figures
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