Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids
arXiv:2002.00628 · doi:10.1103/PhysRevLett.125.136601
Abstract
We include the treatment of quadrupolar fields beyond the Fröhlich interaction in the first-principles electron-phonon vertex in semiconductors. Such quadrupolar fields induce long-range interactions that have to be taken into account for accurate physical results. We apply our formalism to Si (nonpolar), GaAs, and GaP (polar) and demonstrate that electron mobilities show large errors if dynamical quadrupoles are not properly treated.
References in corpus (4)
- Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles
- Piezoelectric Electron-Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN
- Long-range quadrupole electron-phonon interaction from first principles
- First-principles theory of spatial dispersion: Dynamical quadrupoles and flexoelectricity
Cited by in corpus (48)
- First-principles predictions of Hall and drift mobilities in semiconductors
- Discovering and Understanding 2D Semiconductors with High Intrinsic Carrier Mobility at Room Temperature
- Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles
- Piezoelectric Electron-Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN
- Roadmap on Electronic Structure Codes in the Exascale Era
- General invariance and equilibrium conditions for lattice dynamics in 1D, 2D, and 3D materials
- Long-range quadrupole electron-phonon interaction from first principles
- Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
- Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering
- Accurate prediction of Hall mobilities in two-dimensional materials through gauge-covariant quadrupolar contributions
- Zero-point Renormalization of the Band Gap of Semiconductors and Insulators Using the PAW Method
- Unified ab initio description of Fröhlich electron-phonon interactions in two-dimensional and three-dimensional materials
- Assessing the quality of relaxation-time approximations with fully-automated computations of phonon-limited mobilities
- First-principles study of electron transport in ScN
- Phonon-limited Mobility of 2D Semiconductors: Quadrupole Scattering and Free-carrier Screening
- Electron-phonon interaction and longitudinal-transverse phonon splitting in doped semiconductors
- Ab initio dipolar electron-phonon interactions in two-dimensional materials
- Phonon Self-Energy Corrections: To Screen, or Not to Screen
- Abinit 2025: New Capabilities for the Predictive Modeling of Solids and Nanomaterials
- The Wannier Function Software Ecosystem for Materials Simulations
- Remote free-carrier screening to boost the mobility of Fröhlich-limited 2D semiconductors
- Electron mobility of SnO2 from first principles
- Electron-phonon interaction and phonons in 2d doped semiconductors
- Verification and Validation of zero-point electron-phonon renormalization of the bandgap, mass enhancement, and spectral functions
- Predicting Phonon-Induced Spin Decoherence from First Principles: Colossal Spin Renormalization in Condensed Matter
- High-field transport and hot electron noise in GaAs from first principles: role of two-phonon scattering
- Data-driven compression of electron-phonon interactions
- Self-consistent electron lifetimes for electron-phonon scattering
- Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles
- Electronic noise of warm electrons in semiconductors from first-principles
- Nonlinear Hall effect from long-lived valley-polarizing relaxons
- Phonon-limited carrier mobilities and Hall factors in 4H-SiC from first principles
- Spectroscopic signatures of nonpolarons : the case of diamond
- Many-body theory of phonon-induced spin relaxation and decoherence
- Transport and noise of hot electrons in GaAs using a semi-analytical model of two-phonon polar optical phonon scattering
- Nonperturbative self-consistent electron-phonon spectral functions and transport
- Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN and MgSiN
- Ab-initio Van der Waals electrodynamics: polaritons and electron scattering from plasmons and phonons in BN-capped graphene
- Isotope engineering of carrier mobility via Fröhlich electron-phonon interaction
- Origin of interlayer exciton-phonon coupling in 2D heterostructures
- Variational first-principles approach to self-trapped polarons
- Beyond-quasiparticle transport with vertex correction: self-consistent ladder formalism for electron-phonon interactions
- Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO
- The elphbolt ab initio solver for the coupled electron-phonon Boltzmann transport equations
- Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement
- First-principles predictions of carrier mobility with record accuracy using GW perturbation theory
- Exact long-range dielectric screening and interatomic force constants in quasi-2D crystals
- Symmetry-protected topological polarons