First-principles study of electron transport in ScN

Abstract

We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band velocities and effective masses as a function of energy. Electron-phonon scattering is assessed by explicitly computing the $q$-dependent electron-phonon matrix elements, with the inclusion of the long-range electrostatic interaction. The influence of free-carrier screening on the electron transport is assessed using the random phase approximation. We find a notable enhancement of electron mobility when the carrier concentration exceeds 10${}^{20}$ cm${}^{-3}$. We calculate the room-temperature electron mobility in ScN to be 587 cm${}^2$/Vs at low carrier concentrations. When the carrier concentration is increased, the electron mobility starts to decrease significantly around $n=10^{19}$ cm${}^{-3}$, and drops to 240 cm${}^2$/Vs at $n=10^{21}$ cm${}^{-3}$. We also explore the influence of strain in (111)- and (100)-oriented ScN films. For (111) films, we find that a 1.0\% compressive epitaxial strain increases the in-plane mobility by 72 cm${}^2$/Vs and the out-of-plane mobility by 50 cm${}^2$/Vs. For (100) films, a 1.0\% compressive epitaxial strain increases the out-of-plane mobility by as much as 172 cm${}^2$/Vs, but has a weak impact on the in-plane mobility. Our study sheds light on electron transport in ScN at different electron concentrations and shows how strain engineering could increase the electron mobility.

arXiv comment12 pages, 11 figures

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