Theory of electron-plasmon coupling in semiconductors

Abstract

The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Green's function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explain measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment.

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• Thermally-Enhanced Fröhlich Coupling in SnSe
• Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
• Non-linear response in the cumulant expansion for core hole photoemission
• Electron-plasmon interaction induced plasmonic-polaron band replication in epitaxial perovskite SrIrO${}_3$ films
• Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles
• Ab-initio Van der Waals electrodynamics: polaritons and electron scattering from plasmons and phonons in BN-capped graphene
• Energy shifts and broadening of excitonic resonances in electrostatically-doped semiconductors
• Electron-hole dichotomy and enhancement of thermoelectric power factor by electron-hole-asymmetric relaxation time: a model study on a two-valley system with strong intervalley scattering
• Revisiting the Thomas-Fermi Potential for Three-Dimensional Condensed Matter Systems
• Plasmonic polaron in self-intercalated 1T-TiS2
• Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement