Origin of Superconductivity in Boron-doped Diamond
arXiv:cond-mat/0404547 · doi:10.1103/PhysRevLett.93.237003
Abstract
Superconductivity of boron-doped diamond, reported recently at T_c=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high Tc, leading to very large electron-phonon matrix elements. The calculated coupling strength λ~ 0.5 leads to T_c in the 5-10 K range and makes phonon coupling the likely mechanism. Higher doping should increase T_c somewhat, but effects of three dimensionality primarily on the density of states keep doped diamond from having a T_c closer to that of MgB2.
Four pages with two embedded figures, corrected fig1. (To appear in Physical Review Letters(2004))
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