Theoretical Study on Superconductivity in Boron-Doped Diamond

Abstract

We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the attractive force between holes by the ladder approximation under the assumption of instantaneous interaction with the Debye cutoff. We thereby calculate the quasiparticle life time, the evolution of the single-particle spectra due to doping, and the effect of disorder on the superconducting critical temperature $T_c$. We in particular compare our results with those for supercell calculations to see the role of disorder, which turns out to be of crucial importance to $T_c$.

9 pages, 13 figures, submitted to J. Phys. Soc. Jpn., Errors in embedded eps figure files have been corrected

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• Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films
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• Superconducting and Normal State Properties of Heavily Hole-Doped Diamond
• Electronic structures of B-2p and C-2p of boron-doped diamond film by soft X-ray absorption and emission spectroscopy
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• Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond
• Effect of boron dimers on the superconducting critical temperature in boron-doped diamond
• Superconductivity in heavily vacant diamond
• Substitutional doping of Cu in diamond: Mott physics with $p$ orbitals
• Influence of structural disorder and Coulomb interactions in the superconductor-insulator transition applied to boron doped diamond