Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric

Abstract

Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The quality of their charge transport (i.e., mobility), however, has been limited due to charged impurities near the diamond surface. Here, we fabricate diamond field effect transistors by using a monocrystalline hexagonal boron nitride as a gate dielectric. The resulting high mobility of charge carriers allows us to observe quantum oscillations in both the longitudinal and Hall resistivities. The oscillations provide important information on the fundamental properties of the charge carriers, such as effective mass, lifetime, and dimensionality. Our results indicate the presence of a high-quality two-dimensional hole gas at the diamond surface and thus pave the way for studies of quantum transport in diamond and the development of low-loss and high-speed devices.

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• Boron nitride substrates for high-quality graphene electronics
• Metal-insulator transition in two-dimensional electron systems
• Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces
• Challenges and opportunities of ZnO-related single crystalline heterostructures
• Superconductivity in a two-dimensional Electron Gas
• Theoretical Study on Superconductivity in Boron-Doped Diamond
• Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

Cited by in corpus (6)

• High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
• Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
• Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films
• A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces
• Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
• High-field Magnetotransport Studies of Surface Conducting Diamonds