191 citations · 808 across the 19 of their papers we have counts for
19 papers
Non-charge-transfer origin of Tc Enhancement in a Surface Superconductor Si(111)-(root7xroot3)-In with Adsorbed Organic Molecules
Kenta Yokota, Shunsuke Inagaki, Wenxuan Qian +5
The effects of adsorption of Zn-phthalocyanine (ZnPc) molecules on the superconductivity of the Si(111)-(root7xroot3)-In surface are studied through transport measurements under ul…
Field resilient superconductivity in atomic layer crystalline materials
Yoichi Higashi, Shunsuke Yoshizawa, Takashi Yanagisawa +3
A recent study [S. Yoshizawa {\it et al}., Nature Communications {\bf 12}, 1462 (2021)] reported the occurrence of field-resilient superconductivity, that is, enhancement of the in…
Atomic-layer Rashba-type superconductor protected by dynamic spin-momentum locking
Shunsuke Yoshizawa, Takahiro Kobayashi, Yoshitaka Nakata +6
Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit couplin…
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
Yosuke Sasama, Taisuke Kageura, Masataka Imura +4
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importan…
Controlling of the Dirac band states of Pb-deposited graphene by using work function difference
Y. Tsujikawa, M. Sakamoto, Y. Yokoi +5
We have performed scanning tunneling microscope (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer Graphene (BLG) on SiC(0001) substrate to investi…
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…