most citedTopological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices

37 citations · 52 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2020

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7

Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…

cond-mat.mes-hall2019

Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric

Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama +8

Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond f…

cond-mat.mes-hall201937 cited

Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices

Kosuke Endo, Katsuyoshi Komatsu, Takuya Iwasaki +8

Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport…

cond-mat.mes-hall201915 cited

Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts

Nurul Fariha Ahmad, Katsuyoshi Komatsu, Takuya Iwasaki +8

We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum poi…

cond-mat.supr-con2019

Observation of superconductivity in bilayer graphene/hexagonal boron nitride superlattices

Satoshi Moriyama, Yoshifumi Morita, Katsuyoshi Komatsu +9

A class of low-dimensional superconductivity (SC), such as most of "atomic-layer" SCs, has survived only under certain circumstances, implying a role of the substrate. Moreover, in…