Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

Abstract

The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this paper, we provide a practical technique for setting up ionic-liquid-gated field-effect transistors for low-temperature measurements. It allows stable measurements and reduces the electronic inhomogeneity by reducing the shear strain generated in frozen ionic liquid.

arXiv comment5 pages, 6 figures

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• Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric