Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
arXiv:1605.05035 · doi:10.1103/PhysRevB.94.161301
Abstract
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore we find: 1) magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; 2) magnetoresistance is nearly independent of the direction of the applied magnetic field; 3) for the in-plane field, the magnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universal function of B/T. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.
5 pages, 5 figures
References in corpus (5)
- Magnetometry with nitrogen-vacancy defects in diamond
- Sub-nanometer resolution in three-dimensional magnetic-resonance imaging of individual dark spins
- Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond
- Probing surface noise with depth-calibrated spins in diamond
- On the surface paramagnetism of diamond
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- Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond
- Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
- High-field Magnetotransport Studies of Surface Conducting Diamonds