activity
20162025
most citedHigh-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

191 citations · 304 across the 6 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2025

Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices

Mohammad Monish, Koki Hino, Yosuke Sasama +5

High-quality dielectric films are essential for fabricating advanced electronic devices, but their direct deposition often degrades the films and their underlying interfaces, which…

cond-mat.mtrl-sci2023★ 10 cited

Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers

Taisuke Kageura, Yosuke Sasama, Keisuke Yamada +3

The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the…

cond-mat.mtrl-sci2021★ 191 cited

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

Yosuke Sasama, Taisuke Kageura, Masataka Imura +4

Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importan…

cond-mat.mes-hall2020★ 61 cited

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7

Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…

cond-mat.mes-hall2019★ 28 cited

Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric

Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama +8

Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond f…

cond-mat.mtrl-sci2018★ 2 cited

Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

Yamaguchi Takahide, Yosuke Sasama, Hiroyuki Takeya +3

The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. I…

cond-mat.mes-hall2016★ 12 cited

Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond

Yamaguchi Takahide, Yosuke Sasama, Masashi Tanaka +4

We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transis…