191 citations · 304 across the 6 of their papers we have counts for
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Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…
Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama +8
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond f…
Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
Yamaguchi Takahide, Yosuke Sasama, Masashi Tanaka +4
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transis…