High-field Magnetotransport Studies of Surface Conducting Diamonds

Abstract

The observation of strong and tunable spin-orbit interaction (SOI) in surface conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior of surface conducting hydrogen-terminated diamond (H-diamond) Hall bar devices and Al/Al2O3/V2O5/H-diamond MOSFETs, respectively. By adopting a significantly improved theoretical magneto transport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. The model is valid for all doping strategies of surface conducting diamond tested. From this analysis, we find that the orbital magnetoresistance, a classical effect distinct from the SOI, dominates the magnetotransport in surface conducting diamond at high magnetic fields. Furthermore, local hole mobilities as high as 1000 ~ 3000 cm2/Vs have been observed in this work, indicating the possibility of diamond-based electronics with ultra-high hole mobilities at cryogenic temperatures.

References in corpus (10)

• Weak Antilocalization and Spin Precession in Quantum Wells
• High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
• Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures
• Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
• Link between the Superconducting Dome and Spin-Orbit Interaction in the (111) LaAlO${}_3$/SrTiO${}_3$ Interface
• Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond
• Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
• Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs
• Low dimensionality of the diamond surface conductivity
• Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond