191 citations · 276 across the 6 of their papers we have counts for
6 papers
Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
Taisuke Kageura, Yosuke Sasama, Keisuke Yamada +3
The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the…
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
Yosuke Sasama, Taisuke Kageura, Masataka Imura +4
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importan…
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…
Irradiation induced modification of the superconducting properties of heavily boron doped diamond
Daniel Creedon, Yi Jiang, Kumaravelu Ganesan +7
Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemic…
Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
Yamaguchi Takahide, Yosuke Sasama, Hiroyuki Takeya +3
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. I…
Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
Yamaguchi Takahide, Yosuke Sasama, Masashi Tanaka +4
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transis…