activity
20192023
most citedHigh-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

191 citations · 280 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2023

A high-performance deep reservoir computing experimentally demonstrated with ion-gating reservoirs

Daiki Nishioka, Takashi Tsuchiya, Masataka Imura +3

While physical reservoir computing (PRC) is a promising way to achieve low power consumption neuromorphic computing, its computational performance is still insufficient at a practi…

cs.ET2022

Edge-Of-Chaos Learning Achieved by Ion-Electron Coupled Dynamics in an Ion-Gating Reservoir

Daiki Nishioka, Takashi Tsuchiya, Wataru Namiki +5

Physical reservoir computing has recently been attracting attention for its ability to significantly reduce the computational resources required to process time-series data. Howeve…

cond-mat.mtrl-sci2021★ 191 cited

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

Yosuke Sasama, Taisuke Kageura, Masataka Imura +4

Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importan…

cond-mat.mes-hall2020★ 61 cited

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7

Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…

cond-mat.mes-hall2019★ 28 cited

Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric

Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama +8

Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond f…