122 citations · 602 across the 15 of their papers we have counts for
15 papers
Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit
Yoshisuke Ban, Kimihiko Kato, Shota Iizuka +5
To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Gro…
Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields
Takuya Iwasaki, Motoi Kimata, Yoshifumi Morita +7
Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hB…
Direct growth of germanene at interfaces between van der Waals materials and Ag(111)
Seiya Suzuki, Takuya Iwasaki, K. Kanishka H. De Silva +7
Germanene, a two-dimensional honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simpl…
Single-Carrier Transport in Graphene/hBN Superlattices
Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama +4
Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exot…
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…
Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama +8
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond f…