122 citations · 602 across the 15 of their papers we have counts for
12 papers · 1 filter
Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields
Takuya Iwasaki, Motoi Kimata, Yoshifumi Morita +7
Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hB…
Single-Carrier Transport in Graphene/hBN Superlattices
Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama +4
Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exot…
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu +7
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mo…
Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama +8
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond f…
Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
Kosuke Endo, Katsuyoshi Komatsu, Takuya Iwasaki +8
Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport…
Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts
Nurul Fariha Ahmad, Katsuyoshi Komatsu, Takuya Iwasaki +8
We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum poi…
Quantum interferometry with a g-factor-tunable spin qubit
K. Ono, S. N. Shevchenko, T. Mori +2
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effec…
Observation of the quantum valley Hall state in ballistic graphene superlattices
K. Komatsu, Y. Morita, E. Watanabe +4
In graphene superlattices, bulk topological currents can lead to long-range charge-neutral flow and non-local resistance near Dirac points. A ballistic version of these phenomena h…
High-temperature operation of a silicon qubit
Keiji Ono, Takahiro Mori, Satoshi Moriyama
This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promisi…
Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars
Hikari Tomori, Akinobu Kanda, Hidenori Goto +5
A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate,…
Spin effects in single-electron transport through carbon nanotube quantum dots
Satoshi Moriyama, Tomoko Fuse, Tomohiro Yamaguchi +1
We investigate the total spin in an individual single-wall carbon nanotube quantum dot with various numbers of electrons in a shell by using the ratio of the saturation currents of…
Four-electron shell structures and an interacting two-electron system in carbon nanotube quantum dots
S. Moriyama, T. Fuse, M. Suzuki +2
Low-temperature transport measurements have been carried out on single-wall carbon nanotube quantum dots in a weakly coupled regime in magnetic fields up to 8 Tesla. Four-electron…