A possible scenario of metallization in boron doped diamond CB${}_x$

Abstract

Possibility for collectivization of acceptor states in a semiconductor, converting it to metal, is discussed within the scope of Anderson s-d hybride model. This model is generalized for multicomponent band structure and composite acceptor states, localized on pairs of neighbor dopants (impurity "dumbbells"), in order to describe boron doped diamond CB${}_x$. The resulting parameters of band structure, in particular, position of the Fermi level, are compared to the recent experimental data on metallized and superconducting CB${}_x$.

4 pages, 3 figures

References in corpus (2)

• Superconductivity in diamond
• Origin of Superconductivity in Boron-doped Diamond

Cited by in corpus (5)

• Thermal Diffusion Boron Doping of Single-Crystal Diamond
• Effect of boron dimers on the superconducting critical temperature in boron-doped diamond
• Superconductivity in heavily vacant diamond
• Thermal Diffusion Doping of Single Crystal Diamond
• Substitutional doping of Cu in diamond: Mott physics with $p$ orbitals