Nonlinear Hall effect from long-lived valley-polarizing relaxons

Abstract

The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of p-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.

References in corpus (57)

• Advanced capabilities for materials modelling with Quantum ESPRESSO
• Berry Phase Effects on Electronic Properties
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Control of valley polarization in monolayer MoS2 by optical helicity
• Valley polarization in MoS2 monolayers by optical pumping
• Optimized norm-conserving Vanderbilt pseudopotentials
• Valley contrasting physics in graphene: magnetic moment and topological transport
• The PseudoDojo: Training and grading a 85 element optimized norm-conserving pseudopotential table
• The Valley Hall Effect in MoS2 Transistors
• Wannier90 as a community code: new features and applications
• EPW: Electron-phonon coupling, transport and superconducting properties using maximally localized Wannier functions
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
• Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials
• Observation of the nonlinear Hall effect under time reversal symmetric conditions
• Ab initio calculation of the anomalous Hall conductivity by Wannier interpolation
• Nonlinear Hall Effects
• First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
• Towards predictive many-body calculations of phonon-limited carrier mobilities in semiconductors
• Perturbo: a software package for ab initio electron-phonon interactions, charge transport and ultrafast dynamics
• Confinement-induced Berry phase and helicity-dependent photocurrents
• Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4
• Diagrammatic approach to nonlinear optical response with application to Weyl semimetals
• High-frequency rectification via chiral Bloch electrons
• Ab initio Electron Mobility and Polar Phonon Scattering in GaAs
• Origin of the crossover from polarons to Fermi liquids in transition metal oxides
• Gyrotropic effects in trigonal tellurium studied from first principles
• Strongly enhanced Berry dipole at topological phase transitions in BiTeI
• Berry curvature dipole senses topological transition in a moiré superlattice
• Quantum theory of the nonlinear Hall effect
• Consequences of Time-reversal-symmetry Breaking in the Light-Matter Interaction: Berry Curvature, Quantum Metric and Diabatic Motion
• Fluctuation diagnostics of the electron self-energy: Origin of the pseudogap physics
• Thermal transport in crystals as a kinetic theory of relaxons
• First-principles predictions of Hall and drift mobilities in semiconductors
• Terahertz detection based on nonlinear Hall effect without magnetic field
• Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion
• Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids
• Nonlinear Hall Acceleration and the Quantum Rectification Sum Rule
• Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric α-GeTe(111) semiconductor
• Piezoelectric Electron-Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN
• Semiclassical framework for the calculation of transport anisotropies
• Generalization of Fourier's law into viscous heat equations
• First-principles theory of spatial dispersion: Dynamical quadrupoles and flexoelectricity
• Electron-phonon drag enhancement of transport properties from fully coupled \textit{ab initio} Boltzmann formalism
• Magneto-transport phenomena in p-doped diamond from first principles
• Phoebe: a High-Performance Framework for Solving Phonon and Electron Boltzmann Transport Equations
• Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe
• Assessing the quality of relaxation-time approximations with fully-automated computations of phonon-limited mobilities
• Electron-phonon interaction and longitudinal-transverse phonon splitting in doped semiconductors
• Magnetotransport in semiconductors and two-dimensional materials from first principles
• A comprehensive theory of second-order spin photocurrents
• Current Switching of Valley Polarization in Twisted Bilayer Graphene
• Vertex corrections to the dc conductivity in anisotropic multiband systems
• Ab initio electron dynamics in high electric fields: accurate predictions of velocity-field curves
• Optical Conductivity of the two dimensional Hubbard model: vertex corrections, emergent Galilean invariance and the accuracy of the single-site dynamical mean field approximation
• Predicting Phonon-Induced Spin Decoherence from First Principles: Colossal Spin Renormalization in Condensed Matter
• The role of band-index-dependent transport relaxation times in anomalous Hall effect
• Many-body theory of phonon-induced spin relaxation and decoherence

Cited by in corpus (5)

• Beyond-quasiparticle transport with vertex correction: self-consistent ladder formalism for electron-phonon interactions
• Non-adiabatic phonon self-energy due to electrons with finite linewidths
• Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems
• Magnetotransport in Topological Materials and Nonlinear Hall Effect via First-Principles Electronic Interactions and Band Topology
• Identifying geometric third-order nonlinear transport in disordered materials