Nonlinear Hall effect from long-lived valley-polarizing relaxons

Abstract

The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of p-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.

References in corpus (14)

• Advanced capabilities for materials modelling with Quantum ESPRESSO
• Valley polarization in MoS2 monolayers by optical pumping
• The Valley Hall Effect in MoS2 Transistors
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
• Ab initio Electron Mobility and Polar Phonon Scattering in GaAs
• Fluctuation diagnostics of the electron self-energy: Origin of the pseudogap physics
• Semiclassical framework for the calculation of transport anisotropies
• First-principles theory of spatial dispersion: Dynamical quadrupoles and flexoelectricity
• Magnetotransport in semiconductors and two-dimensional materials from first principles
• A comprehensive theory of second-order spin photocurrents
• Current Switching of Valley Polarization in Twisted Bilayer Graphene
• Vertex corrections to the dc conductivity in anisotropic multiband systems
• Ab initio electron dynamics in high electric fields: accurate predictions of velocity-field curves
• Many-body theory of phonon-induced spin relaxation and decoherence