Exact Quantum Virial Expansion for the Optical Response of Doped Two-Dimensional Semiconductors
arXiv:2212.05627 · doi:10.1103/PhysRevLett.131.106901
Abstract
We present a quantum virial expansion for the optical response of a doped two-dimensional semiconductor. As we show, this constitutes a perturbatively exact theory in the high-temperature or low-doping regime, where the electrons' thermal wavelength is smaller than their interparticle spacing. The virial expansion predicts new features of the photoluminescence, such as a non-trivial shape of the attractive branch related to universal low-energy exciton-electron scattering and an associated shift of the attractive peak from the trion energy. Our results are in excellent agreement with recent experiments on doped monolayer MoSe [Zipfel et al., Phys. Rev. B 105, 075311 (2022)] and they imply that the trion binding energy is likely to have been overestimated in previous measurements. Our theory furthermore allows us to formally unify two distinct theoretical pictures that have been applied to this system, with the conventional trion picture results emerging as a high-temperature and weak-interaction limit of Fermi polaron theory.
7 pages, 2 figures (published version)
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Cited by in corpus (6)
- Crossover from exciton polarons to trions in doped two-dimensional semiconductors at finite temperature
- Optical signatures of interlayer electron coherence in a bilayer semiconductor
- Polaronic polariton quasiparticles in a dark excitonic medium
- Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
- Terahertz radiation induced attractive-repulsive Fermi polaron conversion in transition metal dichalcogenide monolayers
- Room-temperature tuning and probing of Fermi polarons in atomically thin semiconductors on a plasmonic metasurface