Tuning exciton recombination rates in doped transition metaldichalcogenides

Abstract

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigate the interplay between doping and exciton-exciton annihilation (EEA) and their impact on the photoluminescence quantum yield in different TMD samples and related heterostructures. We demonstrate that the EEA threshold increases in highly doped samples, where the radiative and non-radiative recombination of trions dominates.

References in corpus (5)

• Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
• All-optical polarization and amplitude modulation of second-harmonic generation in atomically thin semiconductors
• Probing the spin-polarized electronic band structure in monolayer transition metal dichalcogenides by optical spectroscopy
• Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
• Inhibited nonradiative decay at all exciton densities in monolayer semiconductors

Cited by in corpus (5)

• Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr
• Theoretical methods for excitonic physics in two-dimensional materials
• Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h-BN Encapsulations
• Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers
• Emergence of new optical resonances in single-layer transition metal dichalcogenides with atomic-size phase patterns