Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers
arXiv:2408.00097 · doi:10.1063/5.0230578
Abstract
The competition between the radiative and nonradiative lifetimes determines the optical quantum yield and plays a crucial role in the potential optoelectronic applications of transition metal dichalcogenides (TMDC). Here, we show that, in the presence of free carriers, an additional nonradiative decay channel opens for excitons in TMDC monolayers. Although the usual Auger decay channel is suppressed at low doping levels by the simultaneous momentum and energy conservation laws, exciton-phonon coupling relaxes this suppression. By solving a Bethe-Salpeter Equation, we calculate the phonon-assisted Auger decay rates in four typical TMDCs as a function of doping, temperature, and dielectric environment. We find that even for a relatively low doping of 10 cm, the nonradiative lifetime ranges from 16 ps to 165 ps in different TMDCs, offering competition to the radiative decay channel.
6 pages, 4 figures
References in corpus (10)
- 2D materials and van der Waals heterostructures
- Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
- Phonon and Electronic Non-radiative Decay of Excitons in Carbon Nanotubes
- Exciton-phonon coupling strength in single-layer MoSe2 at room temperature
- Boosting quantum yields in 2D semiconductors via proximal metal plates
- Exciton-phonon-scattering: A competition between bosonic and fermionic nature of bound electron-hole pairs
- Tuning exciton recombination rates in doped transition metaldichalcogenides
- Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles
- Impact of optically pumped non-equilibrium steady states on luminescence emission of atomically-thin semiconductor excitons
- Dynamical Control of Excitons in Atomically Thin Semiconductors