activity
20152025
most citedRaman scattering in few-layer MoTe

86 citations · 633 across the 29 of their papers we have counts for

collaborators

29 papers

cond-mat.mtrl-sci2025★ 2 cited

Extremely high excitonic -factors in 2D crystals by alloy-induced admixing of band states

Katarzyna Olkowska-Pucko, Tomasz Woźniak, Elena Blundo +24

Monolayers (MLs) of semiconducting transition metal dichalcogenides (\mbox{S-TMDs}) emit light very efficiently and display rich spin-valley physics, with gyromagnetic (-) facto…

cond-mat.mes-hall2024★ 1 cited

Rydberg series of intralayer K-excitons in WSe multilayers

Piotr Kapuscinski, Artur O. Slobodeniuk, Alex Delhomme +6

Semiconducting transition metal dichalcogenides of group VI are well-known for their prominent excitonic effects and the transition from an indirect to a direct band gap when reduc…

cond-mat.mtrl-sci2024★ 5 cited

Pressure-induced optical anisotropy of HfS

Igor Antoniazzi, Tomasz Woźniak, Amit Pawbake +8

The effect of pressure on Raman scattering (RS) in the bulk HfS is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly…

cond-mat.mtrl-sci2023★ 11 cited

Resonant Raman Scattering of Few Layers CrBr

Łucja Kipczak, Arka Karmakar, Magdalena Grzeszczyk +9

We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed…

cond-mat.mes-hall2023★ 8 cited

Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

M. Zinkiewicz, M. Grzeszczyk, T. Kazimierczuk +10

Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the l…

cond-mat.mtrl-sci2023

Dielectric environment sensitivity of carbon centres in hexagonal boron nitride

Danis I. Badrtdinov, Carlos Rodriguez-Fernandez, Magdalena Grzeszczyk +11

A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrat…