Analogy and dissimilarity of excitons in monolayer and bilayer of MoSe${}_2$

Abstract

Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe${}_2$ encapsulated in hexagonal BN. The measured magnetic field evolutions of the reflectance contrast spectra of the MoSe${}_2$ ML and BL allow us to determine $g$-factors of intralayer A and B excitons, as well as the $g$-factor of the interlayer exciton. We explain the dependence of $g$-factors on the number of layers and excitation state using first principles calculations. Furthermore, we demonstrate that the experimentally measured ladder of excitonic $s$ states in the ML can be reproduced using the $\mathbf{k}\cdot \mathbf{p}$ approach with the Rytova-Keldysh potential that describes the electron-hole interaction. In contrast, the analogous calculation for the BL case requires taking into account the out-of-plane dielectric response of the MoSe${}_2$ BL.

arXiv comment10 pages, 4 figures, + SM

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• Proximity-enhanced valley Zeeman splitting at the WS${}_2$/graphene interface
• Quadrupolar and Dipolar Excitons in Bilayer 2$H$-MoSe${}_2$
• Extremely high excitonic $g$-factors in 2D crystals by alloy-induced admixing of band states
• Rydberg series of intralayer K-excitons in WSe${}_2$ multilayers