Layer number determination in graphene using out-of-plane vibrations

Abstract

We present a double-resonant Raman mode in few-layer graphene, which is able to probe the number of graphene layers reliably. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes/anti-Stokes process combining a LO and a ZO' phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments. The investigation of the out-of-plane ZO' phonon for layer number determination is expected to be transferable to other layered materials like boron nitride.

arXiv commentPhys. Rev. B, in print

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• Low-Frequency Raman Modes and Electronic Excitations In Atomically Thin MoS2 Crystals
• Layer breathing modes in few-layer graphene
• Newly observed first-order resonant Raman modes in few-layer MoS${}_2$
• Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene
• Temperature-activated layer-breathing vibrations in few-layer graphene
• Stacking-dependent shear modes in trilayer graphene
• Growth and Raman spectroscopy of thickness-controlled rotationally faulted multilayer graphene
• Double-resonant LA phonon scattering in defective graphene and carbon nanotubes
• Two-phonon Raman bands of bilayer graphene: revisited
• In-situ Raman study of laser-induced graphene oxidation
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