Quantum transport through MoS${}_2$ constrictions defined by photodoping

Abstract

We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS${}_2$) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS${}_2$ flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote doping in the hBN substrate to create free charge carriers in the MoS${}_2$ layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodoping of the underlying MoS${}_2$/hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.

9 pages, 6 figures

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Cited by in corpus (10)

• Quantum confined Stark effect in a MoS${}_2$ monolayer van der Waals heterostructure
• Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
• Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• First-order magnetic phase-transition of mobile electrons in monolayer MoS${}_2$
• Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
• Coulomb Blockade Spectroscopy of a ${\mathrm{MoS}}_2$ Nanotube
• Signature of spin-resolved quantum point contact in p-type trilayer WSe${}_2$ van der Waals heterostructure
• Local photodoping in monolayer MoS2
• Molecular Switching Operation in Gate Constricted Interface of MoS${}_2$ and hBN Heterostructure