Gate Defined Quantum Confinement in Suspended Bilayer Graphene

Abstract

Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that break layer inversion symmetry, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field B using the single particle energy gap induced by a perpendicular electric field and at B > 0 using the quantum Hall ferromagnet ν = 0 gap for confinement. Coulomb blockade oscillations exhibit periodicity consistent with electrostatic simulations based on local top gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates single electron transport with high device quality and access to vibrational modes, enabling broad applications from electromechanical sensors to quantum bits.

22 pages, 9 figures, includes supplementary information

References in corpus (18)

• The electronic properties of graphene
• Chaotic Dirac billiard in graphene quantum dots
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Gate-induced insulating state in bilayer graphene devices
• Driven coherent oscillations of a single electron spin in a quantum dot
• Asymmetry gap in the electronic band structure of bilayer graphene
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• Spin qubits in graphene quantum dots
• Quantum Hall Ferromagnetism in Graphene
• Topological confinement in bilayer graphene
• Strong coupling between single-electron tunneling and nano-mechanical motion
• Franck-Condon blockade in suspended carbon nanotube quantum dots
• Tunable Coulomb blockade in nanostructured graphene
• Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
• Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires
• Quantum dot behavior in graphene nanoconstrictions
• Bound states and magnetic field-induced valley splitting in gate-tunable graphene quantum dots
• Local Compressibility Measurements of Correlated States in Suspended Bilayer Graphene

Cited by in corpus (56)

• Electronic properties of graphene-based bilayer systems
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Spintronics in MoS_2 monolayer quantum wires
• Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
• Electrostatically induced quantum point contact in bilayer graphene
• A ballistic pn junction in suspended graphene with split bottom gates
• Coupled quantum dots in bilayer graphene
• Recent progresses of quantum confinement in graphene quantum dots
• Gate-defined electron-hole double dots in bilayer graphene
• Guiding of Electrons in a Few Mode Ballistic Graphene Channel
• Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
• Edge modes in zigzag and armchair ribbons of monolayer MoS${}_2$
• Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Topologically non-trivial valley states in bilayer graphene quantum point contacts
• Electrotunable artificial molecules based on van der Waals heterostructures
• Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene
• Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
• Electromechanical Oscillations in Bilayer Graphene
• Visualization and Control of Single Electron Charging in Bilayer Graphene Quantum Dots
• Etched graphene quantum dots on hexagonal boron nitride
• Valley subband splitting in bilayer graphene quantum point contact
• Visualization of phase-coherent electron interference in a ballistic graphene Josephson junction
• Electron-electron interactions in bilayer graphene quantum dots
• Transport Spectroscopy of a Graphene Quantum Dot Fabricated by Atomic Force Microscope Nanolithography
• Local Spin Susceptibilities of Low-Dimensional Electron Systems
• Single-electron Transport in Graphene-like Nanostructures
• Coupling graphene nanomechanical motion to a single-electron transistor
• Confined states in quantum dots defined within finite flakes of bilayer graphene: Coupling to the edge, ionization threshold, and valley degeneracy
• Magnetic field dependence of electronic properties of MoS${}_2$ quantum dots with different edges
• Spintronics with graphene quantum dots
• Electron confinement in graphene with gate-defined quantum dots
• The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
• Ultra long spin decoherence times in graphene quantum dots with a small number of nuclear spins
• Localizing fractional quasiparticles on graphene quantum hall antidots
• Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot
• Quantum transport through MoS${}_2$ constrictions defined by photodoping
• Gate-defined electron interferometer in bilayer graphene
• Bilayer Graphene Quantum Dot Defined by Topgates
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• Single-Carrier Transport in Graphene/hBN Superlattices
• Equilibration in closed quantum systems: Application to spin qubits
• Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime
• Isolated and hybrid bilayer graphene rings
• Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
• Double quantum dots defined in bilayer graphene
• Spin and valley manipulation in single and double electrostatic silicene quantum dots
• Electronic confinement in quantum dots of twisted bilayer graphene
• Quantum state transfer between valley and photon qubits
• Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices
• Electrically controlled crossover between $2\pi$- and $4\pi$-Josephson effects through topologically-confined channels in silicene
• Edge channel confinement in a bilayer graphene $n$-$p$-$n$ quantum dot
• Electron-electron attraction in an engineered electromechanical system
• Bound state properties of ABC-stacked trilayer graphene quantum dots
• Low-energy trions in graphene quantum dots
• Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides