Gate-defined electron interferometer in bilayer graphene
arXiv:2205.04081 · doi:10.1021/acs.nanolett.2c01874
Abstract
We present an electron interferometer defined purely by electrostatic gating in encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device quality is demonstrated by observing Aharonov-Bohm (AB) oscillations with a period of h/e, h/2e, h/3e, and h/4e, witnessing a coherence length of many microns. The AB oscillations as well as the type of carriers (electrons or holes) are seamlessly tunable with gating. The coherence length longer than the ring perimeter and semiclassical trajectory of the carrier are established from the analysis of the temperature and magnetic field dependence of the oscillations. Our gate-defined ring geometry has the potential to evolve into a platform for exploring correlated quantum states such as superconductivity in interferometers in twisted bilayer graphene.
25 pages, 8 figures
References in corpus (11)
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Isospin magnetism and spin-triplet superconductivity in Bernal bilayer graphene
- Gate defined zero- and one-dimensional confinement in bilayer graphene
- Gate-Defined Josephson Junctions in Magic-Angle Twisted Bilayer Graphene
- Highly Tunable Junctions and Nonlocal Josephson Effect in Magic Angle Graphene Tunneling Devices
- A Tunable Monolithic SQUID in Twisted Bilayer Graphene
- Gate-Defined Graphene Quantum Point Contact in the Quantum Hall Regime
- Aharonov-Bohm oscillations and magnetic focusing in ballistic graphene rings
- Gate-defined wires in twisted bilayer graphene: from electrical detection of inter-valley coherence to internally engineered Majorana modes
- Suppression of decoherence in a graphene monolayer ring
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- Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
- Tuning confined states and valley g-factors by quantum dot design in bilayer graphene
- Four-band effective square lattice model for Bernal-stacked bilayer graphene
- Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating
- Sagnac effect in a rotating ring with Dirac fermions