Gate defined zero- and one-dimensional confinement in bilayer graphene

Abstract

We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be electrostatically induced by applying appropriate voltages to the gates. The high quality of the devices becomes apparent from conductance quantization in the constrictions at low temperature. The islands exhibit clear Coulomb blockade and single-electron transport.

5 pages, 5 figures

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Cited by in corpus (58)

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• Electronic properties of graphene-based bilayer systems
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
• Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings
• Electrostatically induced quantum point contact in bilayer graphene
• Coupled quantum dots in bilayer graphene
• Graphene on Hexagonal Boron Nitride
• Recent progresses of quantum confinement in graphene quantum dots
• Gate-defined electron-hole double dots in bilayer graphene
• Guiding of Electrons in a Few Mode Ballistic Graphene Channel
• Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
• Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Topologically non-trivial valley states in bilayer graphene quantum point contacts
• Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene
• Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures
• Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate
• Etched graphene quantum dots on hexagonal boron nitride
• Valley subband splitting in bilayer graphene quantum point contact
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
• Electron-electron interactions in bilayer graphene quantum dots
• Transport Spectroscopy of a Graphene Quantum Dot Fabricated by Atomic Force Microscope Nanolithography
• Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology
• Single-electron Transport in Graphene-like Nanostructures
• Quantum dot behavior in transition metal dichalcogenides nanostructures
• Confined states in quantum dots defined within finite flakes of bilayer graphene: Coupling to the edge, ionization threshold, and valley degeneracy
• Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles
• Spintronics with graphene quantum dots
• Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions
• Ultra long spin decoherence times in graphene quantum dots with a small number of nuclear spins
• Quantum transport through MoS${}_2$ constrictions defined by photodoping
• Wigner localization in a graphene quantum dot with a mass gap
• Gate-defined electron interferometer in bilayer graphene
• Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
• Bilayer Graphene Quantum Dot Defined by Topgates
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• Measuring the local quantum capacitance of graphene using a strongly coupled graphene nanoribbon
• Electron flow in split-gated bilayer graphene
• Equilibration in closed quantum systems: Application to spin qubits
• Single-Carrier Transport in Graphene/hBN Superlattices
• Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime
• Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
• Isolated and hybrid bilayer graphene rings
• Molecular Switching Operation in Gate Constricted Interface of MoS${}_2$ and hBN Heterostructure
• Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
• Double quantum dots defined in bilayer graphene
• Spin and valley manipulation in single and double electrostatic silicene quantum dots
• Electronic confinement in quantum dots of twisted bilayer graphene
• Design of graphene waveguide: Effect of edge orientation and waveguide configuration
• Stacking sensitive topological phases in a bilayer Kane-Mele-Hubbard model at quarter filling
• Valley selecting current partition at zero-line mode of quantum anomalous Hall topologies
• Interacting holes in a gated WSe${}_2$ quantum channel: valley correlations and zigzag Wigner crystal
• Edge channel confinement in a bilayer graphene $n$-$p$-$n$ quantum dot
• Persistent currents in topological and trivial confinement in silicene
• Probing valley phenomena with gate-defined valley splitters
• Four-band effective square lattice model for Bernal-stacked bilayer graphene