Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

Abstract

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.

5 pages, 3 figures

References in corpus (9)

• Ultrahigh electron mobility in suspended graphene
• Boron nitride substrates for high-quality graphene electronics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
• Gate defined zero- and one-dimensional confinement in bilayer graphene
• Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field
• Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping

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