Strain-dependent resistance and giant gauge factor in monolayer WSe2

Abstract

We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe2 potential for the application in the high-performance flexible and transparent electronics.

arXiv comment15 pages, 4 figures

References in corpus (23)

• Atomically thin MoS2: A new direct-gap semiconductor
• Bandgap Engineering of Strained Monolayer and Bilayer MoS2
• Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
• Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials
• Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
• Hubbard model physics in transition metal dichalcogenide moiré bands
• Prediction of the Weyl semimetal in the orthorhombic MoTe2
• Influence of strain on magnetization and magnetoelectric effect in La0.7A0.3MnO3 / PMN-PT(001) (A = Sr; Ca)
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
• High-Mobility Holes in Dual-Gated WSe${}_2$ Field-Effect Transistors
• Strain-dependent modulation of conductivity in single layer transition-metal dichalcogenides
• Epitaxy of Advanced Nanowire Quantum Devices
• Optical imaging of strain in two-dimensional crystals
• Strain-Based Room-Temperature Non-Volatile MoTe${}_2$ Ferroelectric Phase Change Transistor
• Strain-engineering of Berry curvature dipole and valley magnetization in monolayer MoS${}_2$
• Theory of strain in single-layer transition metal dichalcogenides
• Quantum Spin Hall Effect in Two-dimensional Crystals of Transition Metal Dichalcogenides
• Strain-induced insulator state in La_0.7Sr_0.3CoO_3
• Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS${}_2$ and WS${}_2$
• Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer
• Local gating of a graphene Hall bar by graphene side gates
• Graphene Side Gate Engineering