Graphene Side Gate Engineering
arXiv:1410.7498 · doi:10.1109/LED.2011.2180355
Abstract
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore myriads of typical side gated devices such as symmetric dual side gates and asymmetric single side gate biasing, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.
3 pages, 4 figures
References in corpus (7)
- Chaotic Dirac billiard in graphene quantum dots
- Tunable Coulomb blockade in nanostructured graphene
- Silicon nitride gate dielectrics and bandgap engineering in graphene layers
- Dual Gate Graphene FETs with fT of 50 GHz
- Local gating of a graphene Hall bar by graphene side gates
- Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates
- Top and side gated epitaxial graphene field effect transistors
Cited by in corpus (4)
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- Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
- Visualisation of edge effects in side-gated graphene nanodevices
- Strain-dependent resistance and giant gauge factor in monolayer WSe2