367 citations · 824 across the 10 of their papers we have counts for
10 papers
Surface-dominated conductance scaling in Weyl semimetal NbAs
Sushant Kumar, Yi-Hsin Tu, Luo Sheng +6
Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing,…
Unconventional Resistivity Scaling in Topological Semimetal CoSi
Shang-Wei Lien, Ion Garate, Utkarsh Bajpai +9
Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasin…
Size-Dependent Grain Boundary Scattering in Topological Semimetals
Nicholas A. Lanzillo, Utkarsh Bajpai, Ion Garate +1
We assess the viability of topological semimetals for application in advanced interconnect technology, where conductor size is on the order of a few nanometers and grain boundaries…
Projected mushroom-type phase-change memory
Syed Ghazi Sarwat, Timothy M. Philip, Ching-Tzu Chen +7
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shut…
Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu
Ching-Tzu Chen, Utkarsh Bajpai, Nicholas A. Lanzillo +3
The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing th…
Strong interfacial exchange field in the graphene/EuS heterostructure
Peng Wei, Sunwoo Lee, Florian Lemaitre +9
Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic e…
Graphene Side Gate Engineering
Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu +1
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical t…
Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators
Luqiao Liu, A. Richardella, Ion Garate +3
We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI.…
Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene
Ching-Tzu Chen, Emanuele A. Casu, Martin Gajek +1
Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic…
Integer and half-integer flux-quantum transitions in a niobium/iron-pnictide loop
C. -T. Chen, C. C. Tsuei, M. B. Ketchen +2
The recent discovery of iron-based superconductors challenges the existing paradigm of high-temperature superconductivity. Owing to their unusual multi-orbital band structure, magn…