Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene

Abstract

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

References in corpus (4)

• Graphene: Status and Prospects
• Graphene Photonics and Optoelectronics
• Cutting and controlled modification of graphene with ion beams
• Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene

Cited by in corpus (4)

• Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom
• Direct Observation of Unusual Interfacial Dzyaloshinskii-Moriya Interaction in Graphene/NiFe/Ta Heterostructure
• Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition
• Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene