activity
20102024
most citedPhase change memory technology

918 citations · 999 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2024★ 12 cited

A Direct Real-Time Observation of Anion Intercalation in Graphite Process and Its Fully Reversibility by SAXS/WAXS Techniques

Giorgia Greco, Giuseppe Antonio Elia, Daniel Hermida-Merino +2

The process of anion intercalation in graphite and its reversibility plays a crucial role in the next generation energy-storage devices. Herein the reaction mechanism of the alumin…

cond-mat.mtrl-sci2019★ 15 cited

Spin memory of the topological material under strong disorder

Inna Korzhovska, Haiming Deng, Lukas Zhao +5

Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting un…

cond-mat.mtrl-sci2019★ 31 cited

Influence of the electrode nano/microstructure on the electrochemical properties of graphite in aluminum batteries

Giorgia Greco, Dragomir Tatchev, Armin Hoell +4

Herein we report on a detailed investigation of the irreversible capacity in the first cycle of pyrolytic graphite electrodes in aluminum batteries employing 1-ethyl-3-methylimidaz…

cond-mat.mes-hall2013★ 23 cited

Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene

Ching-Tzu Chen, Emanuele A. Casu, Martin Gajek +1

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic…

cond-mat.mtrl-sci2010★ 918 cited

Phase change memory technology

Geoffrey W. Burr, Matthew J. Breitwisch, Michele Franceschini +10

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorp…