activity
20092022
most citedStrong interfacial exchange field in the graphene/EuS heterostructure

367 citations · 824 across the 10 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2022★ 21 cited

Surface-dominated conductance scaling in Weyl semimetal NbAs

Sushant Kumar, Yi-Hsin Tu, Luo Sheng +6

Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing,…

cond-mat.mes-hall2022★ 36 cited

Unconventional Resistivity Scaling in Topological Semimetal CoSi

Shang-Wei Lien, Ion Garate, Utkarsh Bajpai +9

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasin…

cond-mat.mes-hall2021★ 22 cited

Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Ching-Tzu Chen, Utkarsh Bajpai, Nicholas A. Lanzillo +3

The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing th…

cond-mat.mes-hall2015★ 367 cited

Strong interfacial exchange field in the graphene/EuS heterostructure

Peng Wei, Sunwoo Lee, Florian Lemaitre +9

Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic e…

cond-mat.mes-hall2014★ 20 cited

Graphene Side Gate Engineering

Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu +1

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical t…

cond-mat.mes-hall2014★ 125 cited

Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators

Luqiao Liu, A. Richardella, Ion Garate +3

We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI.…

cond-mat.mes-hall2013★ 23 cited

Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene

Ching-Tzu Chen, Emanuele A. Casu, Martin Gajek +1

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic…