Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu
arXiv:2103.10505 · doi:10.1109/IEDM13553.2020.9371996
Abstract
The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines.
arXiv comment4 pages, 12 figures
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