activity
20202022
most citedUnconventional Resistivity Scaling in Topological Semimetal CoSi

36 citations · 95 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2022★ 21 cited

Surface-dominated conductance scaling in Weyl semimetal NbAs

Sushant Kumar, Yi-Hsin Tu, Luo Sheng +6

Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing,…

cond-mat.mes-hall2022★ 36 cited

Unconventional Resistivity Scaling in Topological Semimetal CoSi

Shang-Wei Lien, Ion Garate, Utkarsh Bajpai +9

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasin…

cond-mat.mtrl-sci2022★ 16 cited

Size-Dependent Grain Boundary Scattering in Topological Semimetals

Nicholas A. Lanzillo, Utkarsh Bajpai, Ion Garate +1

We assess the viability of topological semimetals for application in advanced interconnect technology, where conductor size is on the order of a few nanometers and grain boundaries…

cond-mat.mes-hall2021★ 22 cited

Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Ching-Tzu Chen, Utkarsh Bajpai, Nicholas A. Lanzillo +3

The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing th…

cond-mat.mtrl-sci2020

First principles evaluation of fcc ruthenium for use in advanced interconnects

Timothy M. Philip, Nicholas A. Lanzillo, Tue Gunst +4

As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention as been focused on evaluating the electrical performance of…